Magnetoresistive tunnel junction

ABSTRACT

A Magnetoresistive Tunnel Junction (MTJ) includes a magnetic reference layer disposed between a first electrode and a resistive layer. The junction also includes a magnetic free layer disposed between the resistive layer and a second electrode. The surface area of the free layer is less than the surface area of the reference layer.

This application is a divisional of U.S. patent application Ser. No.13/675,344, filed Nov. 13, 2012 and issued on May 10, 2016 as U.S. Pat.No. 9,337,424, which is hereby incorporated by reference in itsentirety.

BACKGROUND

A Magnetoresistive Tunnel Junction (MTJ) is a device that changes itsresistive state based on the state of magnetic materials within thedevice. An MTJ device includes a thin resistive layer between twoferromagnetic layers. One magnetic layer may be referred to as thereference layer. The other magnetic layer may be referred to as the freelayer. The magnetic moment of the reference later generally maintainsthe same direction. Conversely, through application of a voltage acrossthe junction, the direction of the magnetic moment of the free layer canbe reversed. When the direction of the magnetic moment of both the freelayer and the reference layer are the same, electrons can more easilytunnel through the thin resistive layer. In this state, the junction hasa relatively low resistivity. Through application of a voltage with theopposite polarity, the magnetic moment of the free layer can be switchedto oppose the direction of the magnetic moment of the reference layer.In this state, it is more difficult for electrons to tunnel through theresistive layer, causing the junction to have a relatively highresistivity. The different resistive states can be used to store logicalvalues.

Improvements are desired in this field of endeavor. For example, thedipole interaction can be improved between the free and reference layersof the MTJ. Also, it is desired to reduce the density of the device.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1A is a diagram showing an illustrative MTJ device, according toone example of principles described herein.

FIG. 1B is a diagram showing the magnetic moment of an MTJ device,according to one example of principles described herein.

FIG. 1C is a diagram showing the magnetic moment of an MTJ device,according to one example of principles described herein.

FIG. 2A is a diagram showing an illustrative good hysteresis loop for anMTJ device, according to one example of principles described herein.

FIG. 2B is a diagram showing an illustrative bad hysteresis loop for anMTJ device, according to one example of principles described herein.

FIG. 3 is a diagram showing an illustrative cross-sectional view of anMTJ device with an offset free layer, according to one example ofprinciples described herein.

FIG. 4 is a diagram showing an illustrative top view of an MTJ devicewith an offset free layer, according to one example of principlesdescribed herein.

FIG. 5A is a diagram showing an illustrative cross-sectional view of anMTJ device with multiple free layers, according to one example ofprinciples described herein.

FIG. 5B is a diagram showing an illustrative top view of an MTJ devicewith multiple free layers, according to one example of principlesdescribed herein.

FIG. 6 is a diagram showing an illustrative memory module, according toone example of principles described herein.

FIG. 7 is a flowchart showing an illustrative method for forming an MTJdevice, according to one example of principles described herein.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the disclosure. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Moreover,the performance of a first process before a second process in thedescription that follows may include embodiments in which the secondprocess is performed immediately after the first process, and may alsoinclude embodiments in which additional processes may be performedbetween the first and second processes. Various features may bearbitrarily drawn in different scales for the sake of simplicity andclarity. Furthermore, the formation of a first feature over or on asecond feature in the description that follows may include embodimentsin which the first and second features are formed in direct contact, andmay also include embodiments in which additional features may be formedbetween the first and second features, such that the first and secondfeatures may not be in direct contact.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,elements described as being “below” or “beneath” other elements orfeatures would then be oriented “above” the other elements or features.Thus, the exemplary term “below” can encompass both an orientation ofabove and below. The apparatus may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly.

FIG. 1A is a diagram showing an illustrative MTJ device 100. Asmentioned above, an MTJ device 100 includes a resistive layer 106between a magnetic reference layer 104 and a magnetic free layer 108.The reference layer 104 is connected to a first electrode 102 and thefree layer 108 is connected to a second electrode 110. The MTJ device100 may be formed on a semi-conductive substrate and may be formed aspart of an integrated circuit.

According to certain illustrative examples, the electrodes may be madeof a suitable conductive material. Such materials include, but are notlimited to, titanium (Ti), tantalum (Ta), platinum (Pt) or ruthenium(Ru). The electrodes may be formed using a physical vapor deposition(PVD or sputtering) or another suitable process.

The reference layer 104 includes both a pinning layer and a pinnedlayer. The pinning layer is a layer of anti-ferromagnetic (AFM)material. Anti-ferromagnetic materials are those in which the magneticmoments of atoms or molecules align such that a pattern is formedwherein neighboring atoms or molecules have spins pointing in oppositedirections. The pinning layer may be made of a variety of materials,including, but not limited to, platinum manganese (PtMn), iridiummanganese (IrMn), rhodium manganese (RhMn) and iron manganese (FeMn).

The pinned layer includes a ferromagnetic layer having a magnetic momentthat is“pinned” in a particular direction by the anti-ferromagneticpinning layer. Thus, the reference layer does not change its magneticmoment during operation of the MTJ device 100. The ferromagnetic layermay be made of a variety of materials, including, but not limited to,CoFeB, CoFeTa, NiFe, Co, CoFe, CoPt, CoPd, FePt, or other alloys of Ni,Co and Fe.

The resistive layer 106 may be formed of an electrically resistivematerial, such as an oxide material. For example, the resistive layer106 may be made magnesium (Mg), magnesium oxide (MgO), aluminum oxide(AlO), aluminum nitride (AlN), and aluminum oxynitride (AlON). Theresistive layer 106 may be formed through suitable deposition methods.The resistive layer 106 may range in thickness from about 5 angstroms toabout 15 angstroms.

The free layer 108 is also made of a ferromagnetic material. Unlike thereference layer 104, the magnetic moment direction of the free layer 108can change under various conditions during operation of the MTJ device100 because there is no pinning layer adjacent to the free layer 108.When the magnetic moment of the free layer 108 is the same direction asthe magnetic moment of the reference layer 104, electrons can tunnelthrough the resistive layer 106. This causes the resistive layer to bein a relatively low resistive state. Thus, with a properly polarizedvoltage applied, an electric current can flow across the junction 100and through the resistive layer 106.

With an oppositely polarized voltage applied, the direction of themagnetic moment of the free layer 108 can be set to oppose the directionof the magnetic moment of the reference layer 104. In this state, it ismore difficult for electrons to tunnel through the resistive layer 106.This causes the resistive layer 106 to be in a relatively high resistivestate. The different resistive states may be used to represent digitalvalues. For example, the high resistive state may be used to represent adigital ‘0’ while the low resistive state may be used to represent adigital ‘1’.

According to certain illustrative examples, the surface area of the freelayer 108 is smaller than the surface area of the reference layer 104.For example, in the case where the reference layer 104 and free layer108 are substantially circular in shape, the radius of the free layer108 can be smaller than the radius of the reference layer 104. Thisreduces the dipole interaction between the free layer 108 and thereference layer 104.

FIG. 1B is a diagram showing the magnetic moment of an MTJ device 120.Specifically, FIG. 1B illustrates how having a smaller free layer 108reduces the dipole interaction between the two magnetic layers 104, 108.The arrows 112 indicate the direction of the magnetic field between thefree layer 108 and the reference layer 104. A smaller portion of themagnetic field is perpendicular to the plane of the magnetic layers.

FIG. 1C is a diagram showing the magnetic moment of an MTJ device 130 inwhich the free layer 114 is substantially equal in size to the referencelayer 104. If both the free layer 114 and the reference layer 104 werethe same size, then a significant portion of the magnetic field would beperpendicular to the plane of the magnetic layers 104, 114. The arrows116 illustrate the substantially perpendicular magnetic moment.

With a smaller free layer 108 as illustrated in FIG. 1B, a greaterportion of the magnetic field is directed parallel to the plane of themagnetic layers 104, 108, which reduces dipole interaction between themagnetic layers 104, 108. The reduced dipole interaction causes the MTJto exhibit a better hysteresis loop.

Hysteresis is the property of a system in which the output is affectedboth by the present input and past conditions. If an input to such asystem alternately increases and decreases, then the output tends toform a loop. MTJ devices exhibit hysteresis due to the ferromagneticmaterials within. Thus, as the voltage across the junction alternatesbetween positive and negative voltages, the output presents as a loop.

FIG. 2A is a diagram showing an illustrative good hysteresis loop 200for an MTJ device. According to certain illustrative examples, thevertical axis represents resistance while the horizontal axis 204represents the magnetic moment of the free layer. The loop has both ahigh resistive state 206, and a low resistive state 208. When thedirection of the magnetic moment is negative (opposite the direction ofthe magnetic moment of the reference layer), then the device will be ina high resistive state 206. The device will remain as such until anapplied voltage reverses the direction (to be in parallel to thedirection of the magnetic moment of the reference layer), making itpositive enough to allow tunneling of electrons, thereby causing a lowresistive state 208. The device will also remain in that state until anapplied voltage reverses the direction of the magnetic moment enough toinhibit the tunneling of electrons and switch the device back to thehigh resistive state 206.

FIG. 2B is a diagram showing an illustrative bad hysteresis loop 210 foran MTJ device. As mentioned above, the dipole interaction between thefree layer and the reference layer can adversely affect the hysteresisloop. Particularly, a hysteresis loop that is not centered on zero is abad hysteresis loop. The bad hysteresis loop adversely affects theswitching characteristics of the MTJ device. To avoid these adverseeffects, the dipole interaction between the two magnetic layers isreduced. As mentioned above, this may be done by reducing the size ofthe free layer with respect to the reference layer.

FIG. 3 is a diagram showing an illustrative cross-sectional view of anMTJ device 300 with an offset free layer 306. According to certainillustrative examples, the MTJ device 300 includes a resistive layer 304between a reference layer 302 and a free layer 306.

As mentioned above, the hysteresis loop is improved by reducing the sizeof the free layer 306 with respect to the reference layer 302. It isalso desirable to keep the reference layer 302 as small as possible inorder to fit as many MTJ devices within a smaller amount of space. Thisallows for creating higher density memory modules. But, reducing thesize of the reference layer 306 too much results in a smaller free layer306 to reference layer 302 ratio, which adversely affects the hysteresisloop.

According to certain illustrative examples, the center of the free layer306 is offset from the center of the reference layer 302. This offsetfurther reduces the dipole interaction between the free layer 306 andthe reference layer 302. In turn, the offset allows for a goodhysteresis loop while minimizing the overall size of the reference layer302 and thus allowing for higher density memory modules.

According to one illustrative example, the ratio of the radius 310 ofthe free layer 310 and the radius 312 of the reference layer is definedas follows:R>=5r/3  (Equation 1)

Where:

R is the radius 312 of the reference layer 302; and

r is the radius 310 of the free layer 306.

Additionally, the distance between the center of the reference layer 302and the center of the free layer 306 may be defined as follows:D>=R/4+r/4  (Equation 2)

Where:

D is the distance 308 between the two centers;

R is the radius 312 of the reference layer 302; and

r is the radius 310 of the free layer 306.

With the offset distance 308 defined as such, the magnetic layers 302,306 will be positioned such that the core of both layers does notoverlap. The core of a layer is defined as the area that is within lessthan ¼ of the radius of that layer. For example, the core 314 of thereference layer 302 is the area within ¼ of the radius of the referencelayer 302. Likewise, the core 316 of the free layer is the area within ¼of the radius 310 of the free layer 306. With the offset distance 308set as described in Equation 2, the core areas will not overlap. Again,this results in a better hysteresis loop while allowing for a smallerreference layer 302. The smaller reference layer allows for a higherdensity memory module to be formed.

In some examples, the sizing of the radii 310, 312 of both the referencelayer 302 and the free layer 306 can be set to reduce the dipoleinteraction between the two layers to a predetermined level. Thispredetermined level may be based on how small the dipole interactionshould be in order to achieve a sufficient hysteresis loop. A sufficienthysteresis loop is one that allows the MTJ device 300 to meet certaindesign criteria like switching capability. Additionally, the offsetdistance 308 may be adjusted to allow for an array with a predetermineddensity while still maintaining a sufficient hysteresis loop.

FIG. 4 is a diagram showing an illustrative top view 400 of an MTJdevice with an offset free layer 306. FIG. 4 illustrates how the centerof the free layer 306 is offset from the center of the reference layer302 by a specific distance 308. FIG. 4 also illustrates how the distance308 is such that the core 316 of the free layer 306 does not overlap thecore 314 of the reference layer.

FIG. 5A is a diagram showing an illustrative cross-sectional view of anMTJ device with multiple free layers 508, 512. According to certainillustrative examples, an MTJ cell may include more than one free layerper reference layer. For example, the reference layer 504 may beconnected to a single electrode 502. Additionally, two separate freelayers 512, 508 may be formed on the resistive layer 506. Each freelayer is connected to a different electrode so that each free layer canbe set or read separately.

For example, the first free layer 508 may have its magnetic moment setto oppose the magnetic moment of the reference layer 504, thus causing ahigh resistive state between the first top electrode 510 and the bottomelectrode 502. Additionally, the second free layer 512 may have itsmagnetic moment in the same direction as the magnetic moment of the freelayer. This will allow for the tunneling of electrons through theresistive layer between the second free layer 512 and the referencelayer 504. Thus, there will be a relatively low resistive state betweenthe second top electrode 514 and the bottom electrode 502. While onlytwo free layers are shown in FIG. 5A, various embodiments of principlesdescribed herein may include more than two free layers for eachreference layer.

FIG. 5B is a diagram showing an illustrative top view of an MTJ devicewith multiple free layers. The electrodes are not shown in this view.The first free layer 508 and the second free layer 512 can be seen incomparison to the reference layer 504. Such a configuration may be doneaccording to various design purposes to achieve particular memory moduledensities.

FIG. 6 is a diagram showing an illustrative memory module 600. Accordingto certain illustrative examples, the memory module 600 includes anumber of MTJ cells 602. Each MTJ cell 602 may include one or more freelayers and may thus store one or more bits of data accordingly. Asmentioned above, the density of the memory module 600 may depend on thesize of the reference layers for each cell. The density of the memorymodule 600 may also depend on the number of free layers per referencelayer. The memory module illustrated in FIG. 6 illustrates only 32 MTJcells 602. Nevertheless, a practical implementation of the principlesdescribed herein may include a much larger number of MTJ cells within agiven memory module 600.

FIG. 7 is a flowchart showing an illustrative method for forming an MTJdevice. According to certain illustrative examples, the method includesdisposing 702 a magnetic, substantially circular reference layer on afirst electrode, disposing 704 a resistive layer onto the referencelayer, disposing 706 a magnetic, substantially circular free layer onthe resistive layer, and disposing 708 a second electrode so as to beconnected to the free layer. The radius of the free layer is less than aradius of the reference layer.

According to certain illustrative examples, a magnetoresistive tunneljunction includes a magnetic reference layer disposed between a firstelectrode and a resistive layer. The junction also includes a magneticfree layer disposed between the resistive layer and a second electrode.The surface area of the free layer is less than the surface area of thereference layer.

According to certain illustrative examples, A memory module comprisingan array of MTJ cells. Each MTJ cell includes a resistive layer disposedbetween a circular magnetic reference layer and a circular magnetic freelayer, and a first electrode in connection with the reference layer anda second electrode in connection with the free layer. The radius of thefree layer is less than the radius of the reference layer.

According to certain illustrative examples, the method includesdisposing a magnetic, substantially circular reference layer on a firstelectrode, disposing a resistive layer onto the reference layer,disposing a magnetic, substantially circular free layer on the resistivelayer, and disposing a second electrode so as to be connected to thefree layer. The radius of the free layer is less than a radius of thereference layer.

It is understood that various different combinations of the above-listedembodiments and steps can be used in various sequences or in parallel,and there is no particular step that is critical or required.Additionally, although the term “electrode” is used herein, it will berecognized that the term includes the concept of an “electrode contact.”Furthermore, features illustrated and discussed above with respect tosome embodiments can be combined with features illustrated and discussedabove with respect to other embodiments. Accordingly, all suchmodifications are intended to be included within the scope of thisinvention.

The foregoing has outlined features of several embodiments. Those ofordinary skill in the art should appreciate that they may readily usethe present disclosure as a basis for designing or modifying otherprocesses and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those of ordinary skill in the art should also realize that suchequivalent constructions do not depart from the spirit and scope of thepresent disclosure, and that they may make various changes,substitutions and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A method for forming a Magnetoresistive TunnelJunction (MJT), the method comprising: disposing a magnetic,substantially circular reference layer on a first electrode; disposing aresistive layer onto the reference layer; disposing a magnetic,substantially circular free layer on the resistive layer, wherein thereference layer completely overlaps the free layer in a plan view, andwherein the reference layer is larger than the free layer in the planview; and disposing a second electrode so as to be connected to the freelayer; wherein the reference layer produces a first magnetic core in afirst direction, and the free layer produces a second magnetic core in asecond direction, wherein the second direction is different from thefirst direction.
 2. The method of claim 1, wherein a radius of thereference layer in greater than five times a radius of the free layerdivided by three.
 3. The method of claim 1, wherein a center of the freelayer is offset from a center of the reference layer.
 4. The method ofclaim 3, wherein the offset distance is greater than or equal to onefourth a radius of the reference layer plus one fourth a radius of thefree layer.
 5. The method of claim 1, wherein a radius of the free layeris less than a radius of the reference layer.
 6. The method of claim 1further comprising forming the first electrode using physical vapordeposition.
 7. The method of claim 1, wherein disposing the resistivelayer includes forming the resistive layer with a thickness from about 5Angstroms to about 15 Angstroms.
 8. The method of claim 1 furthercomprising aligning a magnetic moment direction of the free layer with amagnetic moment direction of the reference layer.
 9. A method forforming a Magnetoresistive Tunnel Junction (MTJ), the method comprising:positioning a magnetic reference layer between a first electrode and aresistive layer, the magnetic reference layer having a first magneticvertical core; and positioning a magnetic free layer between theresistive layer and a second electrode, the magnetic free layer having asecond magnetic vertical core, wherein the resistive layer is a singlecontinuous layer in a plan view; wherein the magnetic reference layerand the magnetic free layer are positioned so the first magneticvertical core is prevented from overlapping with the second magneticvertical core.
 10. The method of claim 9, wherein the magnetic referencelayer and the magnetic free layer are substantially circular in shape.11. The method of claim 9, wherein a radius of the magnetic free layeris sufficiently smaller than a radius of the magnetic reference layer soas to reduce a dipole interaction between the magnetic free layer andthe magnetic reference layer to a predetermined level.
 12. The method ofclaim 9, wherein a radius of the magnetic reference layer is greaterthan five times a radius of the magnetic free layer divided by three.13. The method of claim 9 further comprising positioning at least oneadditional magnetic free layer over the magnetic reference layer. 14.The method of claim 9 further comprising connecting a second electrodeto the magnetic free layer.
 15. A method for forming a MagnetoresistiveTunnel Junction (MTJ), the method comprising: connecting a magneticreference layer having a first magnetic vertical core to a firstelectrode; positioning a resistive layer over the magnetic referencelayer; and positioning a magnetic free layer having a second magneticvertical core over the reference layer, wherein the magnetic free layeris positioned so that the second magnetic vertical core does not overlapthe first magnetic vertical core, wherein the magnetic reference layeroverlaps the magnetic free layer in a plan view.
 16. The method of claim15 further comprising positioning at least one additional magnetic freelayer over the magnetic reference layer.
 17. The method of claim 15further comprising connecting a second electrode to the magnetic freelayer.
 18. The method of claim 16 further comprising connecting a secondelectrode to the magnetic free layer and a third electrode to the atleast one additional magnetic free layer.
 19. The method of claim 15,wherein the first magnetic vertical core and the second magneticvertical core are not concentric, and an entirety of the magnetic freelayer is positioned directly above the magnetic reference layer.
 20. Themethod of claim 15, wherein a radius of the magnetic free layer issufficiently smaller than a radius of the magnetic reference layer so asto reduce a dipole interaction between the magnetic free layer and themagnetic reference layer to a predetermined level.